transistor (npn) features ? excellent h fe linearity ? switching applications m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage 35 v v ceo collector - emitter voltage 30 v v ebo emitter - base voltage 5 v i c collector current 500 m a p c collector power dissipation 150 m w r ja thermal resistance from j u nction to a mbient 833 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v (br) cbo i c = 100 a , i e =0 35 v collector - emitter breakdown voltage v (br) c e o i c = 1 ma, i b =0 30 v emitter - base breakdown voltage v (br)eb o i e = 100 a , i c =0 5 v collector cut - off current i cbo v cb = 35 v, i e =0 0.1 a emitter cut - off current i ebo v eb = 5 v, i c =0 0.1 a h fe (1) v ce = 1 v, i c = 100 ma 70 400 dc current gain h fe (2) v ce = 6 v, i c = 4 00 ma 25 70 collector - emitter saturation voltage v ce(sat) i c = 1 00 ma, i b = 10 ma 0.25 v b ase - emitter voltage v b e v c e = 1 v,i c = 100 ma, 1 v transition frequency f t v ce = 6 v,i c = 20 ma 300 mhz collector output capacitance c ob v cb = 6 v, i e =0, f=1mhz 7 pf classification of h fe ( 1 ) , h fe (2) rank o y gr(g) range h f e ( 1 ) 70 C 140 120 C 240 200 C 400 range h f e ( 2 ) 25min 4 0 min 7 0 min marking wo wy wg so t C 23 1. base 2. emitter 3. collector 1 www.htsemi.com semiconductor jinyu sc2859 2
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